Nanopatterning of InP(001) surface using e-beam lithography to localize InAs quantum dots for single photon source application

Author

Turala, A. ; Rojo-Romeo, P. ; Regreny, P. ; Gendry, M. ; Priester, C.

Author_Institution

Ecole Centrale de Lyon, Ecully

fYear

2006

fDate

Oct. 2006

Firstpage

189

Lastpage

190

Abstract

This work is devoted to the localization of InAs quantum dots grown by SSMBE on nanostructured InP(001) surfaces: mesas or holes are the sites of privileged nucleation of the quantum dots (QDs). Both nanostructuration methods are compared. The principle of fabrication of a photonic crystal cavity based source with localized QDs is described

Keywords

electron beam lithography; indium compounds; molecular beam epitaxial growth; nanolithography; nanopatterning; nucleation; semiconductor growth; semiconductor quantum dots; InAs; InAs quantum dots localization; InP; SSMBE; e-beam lithography; holes; mesas; nanopatterning; nanostructuration method; nanostructured InP(001) surface; nucleation; photonic crystal cavity fabrication; quantum dots growth; single photon source application; Circuits; Fabrication; Indium gallium arsenide; Indium phosphide; Lithography; Nanopatterning; Photonic crystals; Quantum dots; Surface cleaning; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-9555-7

Electronic_ISBN

0-7803-9555-7

Type

conf

DOI

10.1109/LEOS.2006.278956

Filename

4054120