DocumentCode :
3125951
Title :
Nanopatterning of InP(001) surface using e-beam lithography to localize InAs quantum dots for single photon source application
Author :
Turala, A. ; Rojo-Romeo, P. ; Regreny, P. ; Gendry, M. ; Priester, C.
Author_Institution :
Ecole Centrale de Lyon, Ecully
fYear :
2006
fDate :
Oct. 2006
Firstpage :
189
Lastpage :
190
Abstract :
This work is devoted to the localization of InAs quantum dots grown by SSMBE on nanostructured InP(001) surfaces: mesas or holes are the sites of privileged nucleation of the quantum dots (QDs). Both nanostructuration methods are compared. The principle of fabrication of a photonic crystal cavity based source with localized QDs is described
Keywords :
electron beam lithography; indium compounds; molecular beam epitaxial growth; nanolithography; nanopatterning; nucleation; semiconductor growth; semiconductor quantum dots; InAs; InAs quantum dots localization; InP; SSMBE; e-beam lithography; holes; mesas; nanopatterning; nanostructuration method; nanostructured InP(001) surface; nucleation; photonic crystal cavity fabrication; quantum dots growth; single photon source application; Circuits; Fabrication; Indium gallium arsenide; Indium phosphide; Lithography; Nanopatterning; Photonic crystals; Quantum dots; Surface cleaning; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
Type :
conf
DOI :
10.1109/LEOS.2006.278956
Filename :
4054120
Link To Document :
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