DocumentCode
3126062
Title
Analysis and improvement of the switching behaviour of low voltage power mosfets with high current ratings under hard switching conditions
Author
Wittig, Bjoern ; Fuchs, Friedrich W.
Author_Institution
Inst. of Power Electron. & Electr. Drives, Christian-Albrechts-Univ. of Kiel, Kiel, Germany
fYear
2010
fDate
4-7 July 2010
Firstpage
644
Lastpage
649
Abstract
An analysis and improvement of the switching behaviour of low voltage power MOSFETs with high current ratings is presented. Different turn-off active gate control circuits are described and their performance is analyzed with the focus on the reduction of the overvoltage at turn-off under the precondition of limited increasing of switching losses. The control methods are experimentally compared to a basic gate drive circuit for two different types of low voltage power MOSFETs.
Keywords
power MOSFET; current rating; hard switching condition; power MOSFET; turn-off active gate control circuit; Inductance; Logic gates; Low voltage; MOSFETs; Switches; Switching circuits; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics (ISIE), 2010 IEEE International Symposium on
Conference_Location
Bari
Print_ISBN
978-1-4244-6390-9
Type
conf
DOI
10.1109/ISIE.2010.5637822
Filename
5637822
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