Compact modeling of a magnetic tunnel junction using VHDL-AMS: computer aided design of a two-axis magnetometer

Author

Kammerer, J.B. ; Hebrard, L. ; Hehn, M. ; Braun, F. ; Alnot, P. ; Schuhl, A.

Author_Institution

LEPSI, Strasbourg, France

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

1558

Abstract

Currently, the lack of compact magnetic tunnel junction (MTJ) model is a truly limiting factor for the design of spintronics circuits. In this paper, we present a compact MTJ model written in VHDL-AMS. This behavioral model is based on the Stoner-Wohlfarth model and takes most of the important phenomena such as magnetic coupling, capacitance, and magnetization dependent conductance into account. The method employed to model a two layer magnetic tunnel junction is detailed. Applications of this model such as the simulation of the operation of a magnetometer is also presented.

Keywords

CAD; capacitance; hardware description languages; magnetic tunnelling; magnetoelectronics; magnetometers; Stoner-Wohlfarth model; VHDL-AMS; capacitance; compact modeling; computer aided design; magnetic coupling; magnetic tunnel junction; magnetization dependent conductance; spintronics circuits; two-axis magnetometer; Capacitance; Capacitors; Couplings; Magnetic hysteresis; Magnetic moments; Magnetic separation; Magnetic tunneling; Magnetoelectronics; Magnetometers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2004. Proceedings of IEEE

Print_ISBN

0-7803-8692-2

Type

conf

DOI

10.1109/ICSENS.2004.1426487

Filename

1426487