DocumentCode
3126563
Title
Controlled Photoluminescence from Ge Quantum Dots in Photonic Crystal Microcavities
Author
Xia, Jinsong ; Ikegami, Yuta ; Shiraki, Yasuhiro
Author_Institution
Res. Center for Silicon Nanosci., Musashi Inst. of Technol., Tokyo
fYear
2006
fDate
Oct. 2006
Firstpage
242
Lastpage
243
Abstract
In this paper, we use photonic crystal microcavity to enhance and control the photoluminescence from Ge self-assembled quantum dots. The microcavities are formed by introducing defects into two dimensional PhC slab on silicon-on-insulator (SOI). Strong resonance luminescence is observed at room temperature and the wavelengths of the luminescence peaks are adjusted by changing the PhC parameters
Keywords
elemental semiconductors; germanium; microcavities; optical variables control; photoluminescence; photonic crystals; semiconductor quantum dots; silicon-on-insulator; 293 to 298 K; Ge; Ge self-assembled quantum dots; SOI; Si-SiO2; photoluminescence control; photonic crystal microcavities; resonance luminescence; silicon-on-insulator; Luminescence; Microcavities; Optical control; Photoluminescence; Photonic crystals; Quantum dots; Resonance; Silicon on insulator technology; Slabs; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9555-7
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.279019
Filename
4054147
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