DocumentCode :
3126563
Title :
Controlled Photoluminescence from Ge Quantum Dots in Photonic Crystal Microcavities
Author :
Xia, Jinsong ; Ikegami, Yuta ; Shiraki, Yasuhiro
Author_Institution :
Res. Center for Silicon Nanosci., Musashi Inst. of Technol., Tokyo
fYear :
2006
fDate :
Oct. 2006
Firstpage :
242
Lastpage :
243
Abstract :
In this paper, we use photonic crystal microcavity to enhance and control the photoluminescence from Ge self-assembled quantum dots. The microcavities are formed by introducing defects into two dimensional PhC slab on silicon-on-insulator (SOI). Strong resonance luminescence is observed at room temperature and the wavelengths of the luminescence peaks are adjusted by changing the PhC parameters
Keywords :
elemental semiconductors; germanium; microcavities; optical variables control; photoluminescence; photonic crystals; semiconductor quantum dots; silicon-on-insulator; 293 to 298 K; Ge; Ge self-assembled quantum dots; SOI; Si-SiO2; photoluminescence control; photonic crystal microcavities; resonance luminescence; silicon-on-insulator; Luminescence; Microcavities; Optical control; Photoluminescence; Photonic crystals; Quantum dots; Resonance; Silicon on insulator technology; Slabs; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
Type :
conf
DOI :
10.1109/LEOS.2006.279019
Filename :
4054147
Link To Document :
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