DocumentCode
3126630
Title
Building reliability into EPROMs
Author
Baglee, David A. ; Nannemann, Lynn ; Huang, Cheng
Author_Institution
Intel Corp., Rio Rancho, NM, USA
fYear
1990
fDate
27-29 March 1990
Firstpage
12
Lastpage
18
Abstract
Four areas for achieving a stable, reliable process in a high volume environment are considered: (a) process capability in a manufacturing environment; (b) manufacturing control; (c) assessment of process interactions; (d) process monitoring. These areas are discussed, and suggestions for their application are made.<>
Keywords
EPROM; circuit reliability; integrated circuit manufacture; monitoring; process control; EPROMs; high volume environment; manufacturing control; manufacturing environment; process capability; process interaction assessment; process monitoring; reliable process; Dielectric losses; EPROM; Electrons; Integrated circuit reliability; Manufacturing processes; Monitoring; Nonvolatile memory; Stress; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location
New Orleans, LA, USA
Type
conf
DOI
10.1109/RELPHY.1990.66053
Filename
66053
Link To Document