• DocumentCode
    312669
  • Title

    Some design trade-offs for large CNN chips using small-size transistors

  • Author

    Rodríguez-Vázquez, A. ; Linán, G. ; Domínguez-Castro, R. ; Huertas, J.L. ; Espejo, S.

  • Author_Institution
    Inst. de Microelectron., Seville Univ., Spain
  • Volume
    1
  • fYear
    1997
  • fDate
    9-12 Jun 1997
  • Firstpage
    741
  • Abstract
    Small-size MOS transistors (MOST) exhibit a bunch of second-order effects which limit their application to design Cellular Neural Network (CNN) chips. The inverse dependency of mismatch with transistor sizes may result in severe accuracy degradation. Also, because of the down scaling of supply voltages with the technology feature size, noise and distortion produce large additional errors in submicron technologies. To reduce the influence of all these errors requires one to properly choose the interconnection synapse circuitry, to perform intensive parametric optimization, and to use large enough transistor sizes. Consequently, the cell density and the operation speed cannot be scaled up to their limits because they have to be traded-off for accuracy. This trade-off is illustrated by the evaluation of the composed Power/(Precision×Speed) figure, which gives results independent of the sizes. In addition to the parametric errors, catastrophic faults impose a limit on the maximum chip size for given yield, and open the issues of fast go/no-go testing, fault-driven reconfiguration and/or multi-chip architectures
  • Keywords
    MOS integrated circuits; cellular neural nets; integrated circuit design; integrated circuit testing; integrated circuit yield; neural chips; CNN chips; MOS transistors; accuracy degradation; catastrophic faults; cell density; fault-driven reconfiguration; go/no-go testing; interconnection synapse circuitry; inverse mismatch dependency; maximum chip size; multi-chip architectures; parametric optimization; second-order effects; submicron technologies; yield; Capacitance; Cellular neural networks; Circuit faults; Circuit noise; Degradation; Energy consumption; Integrated circuit interconnections; MOSFETs; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on
  • Print_ISBN
    0-7803-3583-X
  • Type

    conf

  • DOI
    10.1109/ISCAS.1997.608990
  • Filename
    608990