Title :
A low voltage/ low power 1.57 GHz low noise amplifier
Author :
Salmeh, Roghoyeh
Author_Institution :
Dept. of Electr. & Comput. Eng., Calgary Univ., Alta.
Abstract :
This paper describes the design of a 1.57 GHz low noise amplifier. The LNA uses a modified cascode architecture and was implemented in CMOS 90 nm technology. Powered by a 1.0-V supply the LNA features 19 dB of gain and a 1.2 dBm noise figure. The LNA draws only 1.1 mA current and is stable over a wide frequency range. Input and output return losses of -5 dB and -15 dB have been achieved
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; low-power electronics; network topology; -15 dB; -5 dB; 1 V; 1.1 mA; 1.57 GHz; 19 dB; 90 nm; CMOS technology; LNA; low noise amplifier; low power amplifier; low voltage amplifier; modified cascode architecture; Capacitors; Circuit noise; Impedance; Inductors; Integrated circuit noise; Low voltage; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Resistors;
Conference_Titel :
Advances in Wired and Wireless Communication, 2005 IEEE/Sarnoff Symposium on
Conference_Location :
Princeton, NJ
Print_ISBN :
0-7803-8854-2
DOI :
10.1109/SARNOF.2005.1426517
