Title :
Comparison of the gain recovery times in low dimensional semiconductor amplifiers at 1.55 μm
Author :
Zilkie, A.J. ; Meier, J. ; Smith, P.W.E. ; Mojahedi, M. ; Aitchison, J.S. ; Poole, P.J. ; Allen, C.Ni. ; Barrios, P. ; Poitras, D. ; Wang, R.H. ; Rotter, T.J. ; Yang, C. ; Stintz, A. ; Malloy, K.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont.
fDate :
Oct. 29 2006-Nov. 2 2006
Abstract :
We compare experimentally the gain recovery times of quantum dot, quantum dash, and quantum well amplifiers based on InP and operating at 1.55mum. The QD device gives the shortest recovery time of ~15 ps
Keywords :
III-V semiconductors; indium compounds; laser beams; semiconductor optical amplifiers; semiconductor quantum dots; semiconductor quantum wells; 1.55 micron; InP; gain recovery; quantum dash amplifier; quantum dot amplifier; quantum well amplifier; semiconductor amplifier; Absorption; Indium phosphide; Molecular beam epitaxial growth; Quantum computing; Quantum dots; Quantum well devices; Semiconductor optical amplifiers; Stationary state; Substrates; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9556-5
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279055
