DocumentCode :
3126999
Title :
IGBT advanced model used on degraded mode analysis
Author :
Charfi, F. ; Francois, B. ; Messaoud, M.B. ; Al-Haddad, K. ; Sellami, F.
Author_Institution :
Lab. d´´Electronique et de Technologie de l´´Inf., Sfax, Tunisia
Volume :
7
fYear :
2002
fDate :
6-9 Oct. 2002
Abstract :
The study of the degraded mode is of high importance in proposing diagnosis strategies. Hence the use of a precise modelling of the power electronic components is necessary to make good simulations. The paper presents an advanced IGBT model based on the functional description of a complete model which covers linear, saturation and breakdown modes. Several simulations are presented to show its validity in the static and dynamic behaviours. The comparison between the Matlab Power Blockset model and the proposed one proves the reliability of our approach.
Keywords :
digital simulation; electronic engineering computing; fault diagnosis; insulated gate bipolar transistors; invertors; IGBT advanced model; Matlab Power Blockset model; breakdown mode; degraded mode analysis; diagnosis strategies; functional description; linear mode; power electronic components; precise modelling; saturation mode; Circuit simulation; Degradation; Insulated gate bipolar transistors; Mathematical model; Power electronics; Power system modeling; Power system protection; Power system reliability; Power system simulation; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Systems, Man and Cybernetics, 2002 IEEE International Conference on
ISSN :
1062-922X
Print_ISBN :
0-7803-7437-1
Type :
conf
DOI :
10.1109/ICSMC.2002.1175743
Filename :
1175743
Link To Document :
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