Improvement of electromigration resistance of layered aluminum conductors

Author

Hinode, Kenji ; Homma, Yoshio

Author_Institution

Hitachi Ltd., Tokyo, Japan

fYear

1990

fDate

27-29 March 1990

Firstpage

25

Lastpage

30

Abstract

The electromigration of layered fine Al conductors (AlSi/TiN, AlSi/W, over/under) is discussed. The study indicates that (1) layering with refractory metals degrades the migration immunity of the Al layer, (2) refractory metal layers tend to suppress Al grain growth and crystal orientation, (3) by improving the film properties of refractory metals and optimizing the layer structure to minimize this grain growth suppression, conductor lifetimes can be lengthened by one or more orders of magnitude over those of conventionally layered or monolayer conductors.<>

Keywords

VLSI; aluminium; aluminium alloys; electromigration; integrated circuit technology; life testing; metallic thin films; metallisation; silicon alloys; AlSi-TiN; AlSi-W; crystal orientation; electromigration resistance; grain growth suppression; interconnects; layer structure; layered aluminum conductors; layered fine Al conductors; migration immunity; monolayer conductors; refractory metals; submicron VLSI; Aluminum; Artificial intelligence; Conducting materials; Conductive films; Conductors; Electromigration; Optical films; Stress; Testing; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1990. 28th Annual Proceedings., International

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/RELPHY.1990.66056

Filename

66056