DocumentCode
3127273
Title
Lithography for sub-90nm applications
Author
Van den Hove, L. ; Goethals, A.M. ; Ronse, K. ; Van Bavel, M. ; Vandenberghe, G.
Author_Institution
IMEC vzw, Leuven, Belgium
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
3
Lastpage
8
Abstract
In order to cope with the progressive scaling of CMOS, new lithography techniques are introduced for sub-90nm applications. Among them are the introduction of the 157nm wavelength and extreme ultra-violet lithography (EUVL). However, the delay in availability of these tools requires the extension of 193nm lithography towards future technology nodes. This paper gives an overview of the latest breakthroughs and the remaining challenges to the lithography community.
Keywords
CMOS integrated circuits; ULSI; ultraviolet lithography; 157 nm; 193 nm; CMOS; ULSI; extreme ultra-violet lithography; scaling; technology nodes; Birefringence; CMOS technology; Contamination; Lenses; Lithography; Optical design; Optical materials; Optical refraction; Optical variables control; Semiconductor device manufacture;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175767
Filename
1175767
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