Title :
Low-frequency noise characteristics in SiGe channel heterostructure dynamic threshold pMOSFET (HDTMOS)
Author :
Asai, Akira ; Sato-Iwanaga, Junko ; Inoue, Akira ; Hara, Yoshihiro ; Kanzawa, Yoshihiko ; Sorada, Haruyuki ; Kawashima, Takahiro ; Ohnishi, Tadasuke ; Takagi, Takeshi ; Kubo, Minoru
Author_Institution :
Adv. Technol. Res. Labs., Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
We present the first investigation of low frequency noise in the SiGe channel heterostructure dynamic threshold p-MOSFET (HDTMOS). The sub-threshold characteristics and drain current noise were measured and evaluated. The input referred noise of the SiGe HDTMOS was reduced to about one-tenth compared with that of the Si MOS, because of higher transconductance g/sub m/ and less interface states at the Si/SiGe hetero-interface.
Keywords :
Ge-Si alloys; MOSFET; interface states; semiconductor device noise; semiconductor materials; Si-SiGe; Si/SiGe hetero-interface; SiGe HDTMOS; SiGe channel heterostructure dynamic threshold pMOSFET; drain current noise; input referred noise; interface states; low-frequency noise characteristics; noise spectral density; subthreshold characteristics; transconductance; Contacts; Current measurement; Doping; Germanium silicon alloys; Low-frequency noise; MOSFET circuits; Noise measurement; Silicon germanium; Transconductance; Voltage;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175773
