Temperature dependent channel backscattering coefficients in nanoscale MOSFETs

The ratio of the mean-free-path to the critical length near the low-field source is key to channel backscattering characteristics in nanoFETs. To extract it, we perform temperature experiment from -40/spl deg/C to 75/spl deg/C on 17 /spl Aring/ thick gate oxide MOSFETs with varying mask gate lengths down to 75 nm. In this paper we report that once the saturation drain current is measured against temperature, the mean-free-path /spl lambda/ with respect to the critical length l can readily be assessed at specific temperature. Dependencies on gate length, drain voltage, and gate voltage are then established that further enable nanoFETs scaling projections. The temperature dependent version of existing backscattering model is derived in this work.