Title :
A 90 nm communication technology featuring SiGe HBT transistors, RF CMOS, precision R-L-C RF elements and 1 /spl mu/m2 6-T SRAM cell
Author :
Kuhn, K. ; Agostinelli, M. ; Ahmed, S. ; Chambers, S. ; Cea, S. ; Christensen, S. ; Fischer, P. ; Gong, J. ; Kardas, C. ; Letson, T. ; Henning, L. ; Murthy, A. ; Muthali, H. ; Obradovic, B. ; Packan, P. ; Pae, S.W. ; Post, I. ; Putna, S. ; Raol, K. ; Rosk
Author_Institution :
Portland Technol. Dev., Hillsboro, OR, USA
Abstract :
This paper presents a highly-manufacturable process technology featuring SiGe HBT devices fully integrated into a 90 nm leading-edge high performance CMOS technology. The technology was developed on a 300 mm wafer platform, and supports process elements including RF CMOS devices, a MIM capacitor, precision resistors, high-Q inductors and varactors.
Keywords :
BiCMOS integrated circuits; MIM devices; SRAM chips; heterojunction bipolar transistors; inductors; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; varactors; 300 mm; 6-T SRAM cell; 90 nm; BiCMOS; HBT; MIM capacitor; RF CMOS; RF CMOS devices; SiGe; high-Q inductors; mixed analog-digital ICs; precision R-L-C RF elements; precision resistors; process elements; varactors; CMOS process; CMOS technology; Communications technology; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; MIM capacitors; Radio frequency; Resistors; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175782
