Novel light emitting device with ultrafast color switching

Author

Koudelka, R.D. ; Woodall, J.M. ; Harmon, E.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

99

Lastpage

102

Abstract

A novel light-emitting device capable of ultrafast switching of the output wavelength is proposed and demonstrated. The device achieves an electrical modulation bandwidth in excess of 1.75 GHz at 905 nm. The device contains two light-emitting regions separated by a transition region. Minority electrons are photogenerated in the device using an external CW optical pump. The light emission color is toggled by spatially relocating minority carriers from one light-emitting region (905 run peak wavelength) to another (797 nm peak wavelength) as a result of an applied voltage.

Keywords

III-V semiconductors; aluminium compounds; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; light emitting devices; minority carriers; semiconductor devices; switching; transient response; 1.75 GHz; 797 nm; 905 nm; AlGaAs-InGaP-InGaAs; dual light-emitting regions; electrical modulation bandwidth; external CW optical pump; light emission colour toggling; light-emitting device; minority carrier lifetime; minority carrier spatial relocation; output wavelength switching; photogenerated minority electrons; room temperature photoluminescence spectrum; transient optical characteristics; ultrafast switching; Bandwidth; Charge carrier lifetime; Doping; Light emitting diodes; Material storage; Optical modulation; Optical pumping; Photonic band gap; Stimulated emission; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175788

Filename

1175788