Title :
Novel light emitting device with ultrafast color switching
Author :
Koudelka, R.D. ; Woodall, J.M. ; Harmon, E.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
A novel light-emitting device capable of ultrafast switching of the output wavelength is proposed and demonstrated. The device achieves an electrical modulation bandwidth in excess of 1.75 GHz at 905 nm. The device contains two light-emitting regions separated by a transition region. Minority electrons are photogenerated in the device using an external CW optical pump. The light emission color is toggled by spatially relocating minority carriers from one light-emitting region (905 run peak wavelength) to another (797 nm peak wavelength) as a result of an applied voltage.
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; light emitting devices; minority carriers; semiconductor devices; switching; transient response; 1.75 GHz; 797 nm; 905 nm; AlGaAs-InGaP-InGaAs; dual light-emitting regions; electrical modulation bandwidth; external CW optical pump; light emission colour toggling; light-emitting device; minority carrier lifetime; minority carrier spatial relocation; output wavelength switching; photogenerated minority electrons; room temperature photoluminescence spectrum; transient optical characteristics; ultrafast switching; Bandwidth; Charge carrier lifetime; Doping; Light emitting diodes; Material storage; Optical modulation; Optical pumping; Photonic band gap; Stimulated emission; Ultrafast optics;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175788
