Process HE: a highly advanced trench isolated bipolar technology for analogue and digital applications

Author

Hunt, P.C. ; Cooke, M.P.

Author_Institution

Plessey Res. & Technol. Ltd., Towcester, UK

fYear

1988

fDate

16-19 May 1988

Abstract

He is a novel bipolar process which incorporates polysilicon base/emitter contacts, trench isolation, and an advanced base/emitter structure. The initial version of the process has a 14-GHz f _T and will shortly enter into full production. The final version of the process has a 22-GHz f_T and has recently finished its development phase. A description is given of three aspects of HE. The first is the fabrication sequence for which a novel base-emitter sidewall spacer technique is outlined. The second is the performance of HE transistors themselves. Finally, three representative integrated circuits are described

Keywords

bipolar integrated circuits; digital integrated circuits; integrated circuit technology; linear integrated circuits; microwave integrated circuits; 14 to 22 GHz; HE process; HE transistors; analogue ICs; base-emitter sidewall spacer technique; base/emitter structure; bipolar process; cutoff frequency; digital ICs; fabrication sequence; integrated circuits; performance; polycrystalline Si; polysilicon contacts; trench isolated bipolar technology; trench isolation; Anisotropic magnetoresistance; Apertures; Epitaxial layers; Etching; Fabrication; Helium; Implants; Isolation technology; Production; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988

Conference_Location

Rochester, NY

Type

conf

DOI

10.1109/CICC.1988.20913

Filename

20913