Title :
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging
Author :
Meneghesso, G. ; Levada, S. ; Pierobon, R. ; Rampazzo, F. ; Zanoni, E. ; Cavallini, A. ; Castaldini, A. ; Scamarcio, G. ; Du, S. ; Eliashevich, I.
Author_Institution :
Dipt. di Elettronica e Inf., Padova Univ., Italy
Abstract :
This work presents the results of an extensive DC current aging and failure analysis carried out on blue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels. DLTS and photocurrent spectra indicate the creation of extended defects in devices aged at very high current density.
Keywords :
III-V semiconductors; ageing; deep level transient spectroscopy; doping profiles; extended defects; failure analysis; gallium compounds; indium compounds; light emitting diodes; photoconductivity; wide band gap semiconductors; DLTS; InGaN-GaN; accelerated DC current aging; blue InGaN/GaN LED; current density; deep levels; doping profile; extended defects; failure analysis; package degradation; photocurrent spectra; Accelerated aging; Current density; DC generators; Degradation; Doping profiles; Failure analysis; Gallium nitride; Light emitting diodes; Packaging; Photoconductivity;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175789
