Title :
Compact modeling of drain and gate current noise for RF CMOS
Author :
Scholten, A.J. ; Tiemeijer, L.F. ; van Langevelde, R. ; Havens, R.J. ; Venezia, V.C. ; Zegers-van Duijnhoven, A.T.A. ; Neinhus, B. ; Jungemann, Christoph ; Klaasen, D.B.M.
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
Abstract :
A model for RF CMOS circuit design is presented that is capable of predicting drain and gate current noise without adjusting any parameters. Additionally, the presence of (i) noise associated with avalanche multiplication, and (ii) shot noise of the direct-tunneling gate current in leaky dielectrics is revealed.
Keywords :
CMOS integrated circuits; avalanche breakdown; equivalent circuits; integrated circuit design; integrated circuit modelling; integrated circuit noise; radiofrequency integrated circuits; shot noise; tunnelling; 0.18 micron; RF CMOS circuit design; avalanche multiplication; compact modeling; direct-tunneling gate current; drain current noise; gate current noise; leaky dielectrics; shot noise; Circuit noise; Circuit synthesis; Dielectrics; Electrical resistance measurement; Low-frequency noise; MOSFETs; Noise measurement; Predictive models; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175795
