DocumentCode
3127950
Title
Compact modelling of cyclostationary noise in semiconductor devices: a critical discussion
Author
Bonani, F. ; Donati Guerrieri, S. ; Ghione, G.
Author_Institution
Dipt. di Elettronica, Politeenico di Torino, Italy
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
133
Lastpage
136
Abstract
Available techniques for the determination of compact cyclostationary noise models starting from the modulation of small-signal, stationary noise models are described and compared in a critical discussion. Two modulation approaches are considered, and their results are checked against physics-based noise simulations for two simple devices, showing that device-dependent strategies and careful comparison with experimental results are necessary for devising accurate models.
Keywords
modulation; random noise; semiconductor device models; semiconductor device noise; RF signal modulation; compact modelling; cyclostationary noise; device-dependent strategies; modulation approaches; physics-based noise simulations; semiconductor devices; small-signal stationary noise models; Active noise reduction; Circuit noise; Colored noise; Filtering; Fluctuations; Frequency modulation; Noise level; Semiconductor device noise; Semiconductor devices; White noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175796
Filename
1175796
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