• DocumentCode
    3127960
  • Title

    New, closed-form compact model for the cyclostationary noise and LS conversion behaviour of RF junction diodes

  • Author

    Bonani, F. ; Donati Guerrieri, Simona ; Ghione, G.

  • Author_Institution
    Dipt. di Elettronica, Politecnico di Torino, Italy
  • fYear
    2002
  • fDate
    8-11 Dec. 2002
  • Firstpage
    137
  • Lastpage
    140
  • Abstract
    Classical bipolar junction theory is applied to the determination of closed-form expressions for the conversion admittance matrix and the cyclostationary noise characterization of pn diodes for RF applications. The compact model applies to both long- and short-side junctions, and is validated against physics-based simulations.
  • Keywords
    electric admittance; microwave diodes; semiconductor device models; semiconductor device noise; LS conversion behaviour; RF junction diodes; classical bipolar junction theory; closed-form compact model; closed-form expressions; conversion admittance matrix; cyclostationary noise; distributed model; large-signal modelling; long-side junctions; physics-based simulations; pn diodes; short-side junctions; Admittance; Circuit noise; Circuit simulation; Closed-form solution; Diodes; Equations; Noise generators; Parasitic capacitance; RF signals; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2002. IEDM '02. International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7462-2
  • Type

    conf

  • DOI
    10.1109/IEDM.2002.1175797
  • Filename
    1175797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3127960