Title :
New, closed-form compact model for the cyclostationary noise and LS conversion behaviour of RF junction diodes
Author :
Bonani, F. ; Donati Guerrieri, Simona ; Ghione, G.
Author_Institution :
Dipt. di Elettronica, Politecnico di Torino, Italy
Abstract :
Classical bipolar junction theory is applied to the determination of closed-form expressions for the conversion admittance matrix and the cyclostationary noise characterization of pn diodes for RF applications. The compact model applies to both long- and short-side junctions, and is validated against physics-based simulations.
Keywords :
electric admittance; microwave diodes; semiconductor device models; semiconductor device noise; LS conversion behaviour; RF junction diodes; classical bipolar junction theory; closed-form compact model; closed-form expressions; conversion admittance matrix; cyclostationary noise; distributed model; large-signal modelling; long-side junctions; physics-based simulations; pn diodes; short-side junctions; Admittance; Circuit noise; Circuit simulation; Closed-form solution; Diodes; Equations; Noise generators; Parasitic capacitance; RF signals; Radio frequency;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175797
