Title :
Helium Implantation into Silicon: Nonlinear and Linear Optoelectronic Applications
Author :
Tsang, H.K. ; Liu, Y.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin
Abstract :
Helium ion implantation in silicon can enhance linear absorption at below bandgap wavelengths and reduce the carrier lifetime. Applications for in-line optical power monitoring and nonlinear devices are discussed
Keywords :
carrier lifetime; helium; integrated optoelectronics; ion implantation; nonlinear optics; optical waveguides; SOI waveguides; carrier lifetime; helium ion implantation; in-line optical power monitoring; linear absorption; linear optoelectronic application; nonlinear devices; nonlinear optoelectronic application; silicon; Absorption; Charge carrier lifetime; Helium; Ion implantation; Nonlinear optical devices; Nonlinear optics; Optical devices; Particle beam optics; Photonic band gap; Silicon;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279161
