DocumentCode
3127987
Title
Helium Implantation into Silicon: Nonlinear and Linear Optoelectronic Applications
Author
Tsang, H.K. ; Liu, Y.
Author_Institution
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin
fYear
2006
fDate
Oct. 2006
Firstpage
384
Lastpage
385
Abstract
Helium ion implantation in silicon can enhance linear absorption at below bandgap wavelengths and reduce the carrier lifetime. Applications for in-line optical power monitoring and nonlinear devices are discussed
Keywords
carrier lifetime; helium; integrated optoelectronics; ion implantation; nonlinear optics; optical waveguides; SOI waveguides; carrier lifetime; helium ion implantation; in-line optical power monitoring; linear absorption; linear optoelectronic application; nonlinear devices; nonlinear optoelectronic application; silicon; Absorption; Charge carrier lifetime; Helium; Ion implantation; Nonlinear optical devices; Nonlinear optics; Optical devices; Particle beam optics; Photonic band gap; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9555-7
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.279161
Filename
4054218
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