Title :
Statistics of successive breakdown events for ultra-thin gate oxides
Author :
Sune, J. ; Wu, E.
Author_Institution :
Departament d´Enginyeria Electronica, Univ. Autonoma de Barcelona, Bellaterra, Spain
Abstract :
The first oxide breakdown event does not always cause the device or chip failure. In this work, a simple analytical physics-based model is proposed to describe the statistics of successive breakdown events in gate insulators. The results are tested using grouping experiments based on very large sample size statistics. These results are relevant to the reliability of circuit applications where the device (and/or the chip) tolerates several breakdown events without causing device/circuit malfunction. Approximate Weibull distributions valid at the low percentiles relevant to reliability extrapolation are also presented.
Keywords :
MOSFET; Weibull distribution; electric breakdown; failure analysis; insulating thin films; integrated circuit reliability; semiconductor device models; semiconductor device reliability; statistical analysis; MOSFETs; SiO/sub 2/; analytical physics-based model; approximate Weibull distributions; circuit reliability; gate insulators; grouping experiments; reliability extrapolation; successive breakdown event statistics; ultra-thin gate oxides; very large sample size statistics; Analytical models; Circuits; Electric breakdown; Equations; Insulation; MOSFETs; Microelectronics; Statistical analysis; Statistical distributions; Statistics;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175800
