• DocumentCode
    3128110
  • Title

    Spectroscopic analysis of trap assisted tunneling in thin oxides by means of substrate hot electron injection experiments

  • Author

    Driussi, F. ; Iob, R. ; Esseni, D. ; Selmi, L. ; van Schaijk, R. ; Widdershoven, F.

  • Author_Institution
    DIEGM, Udine Univ., Italy
  • fYear
    2002
  • fDate
    8-11 Dec. 2002
  • Firstpage
    159
  • Lastpage
    162
  • Abstract
    In this paper we present experimental evidence of the contribution of stress induced traps to Substrate Hot Electron (SHE) injection. We investigate the energy distribution of traps generated by Fowler Nordheim (FN) and Hot Electron (HE) stress with the aid of simulations and experiments. Results suggest that HE stress generates more oxide traps at high energy with respect to FN stress. The comparison between experiments and simulations also provides a new additional evidence of the inelastic nature of the trap assisted tunneling mechanism.
  • Keywords
    MOS capacitors; hot carriers; insulating thin films; interface states; leakage currents; semiconductor device reliability; tunnelling; CMOS process; Fowler Nordheim stress; Si-SiO/sub 2/; hot electron stress; inelastic trap assisted tunneling mechanism; large area n/sup +/ ringed capacitors; oxide traps; spectroscopic analysis; stress induced traps; substrate hot electron injection; thin oxides; trap assisted tunneling; trap energy distribution; Current measurement; Doping profiles; Electron traps; Helium; Nonvolatile memory; Spectroscopy; Steady-state; Stress; Substrate hot electron injection; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2002. IEDM '02. International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7462-2
  • Type

    conf

  • DOI
    10.1109/IEDM.2002.1175803
  • Filename
    1175803