DocumentCode
3128110
Title
Spectroscopic analysis of trap assisted tunneling in thin oxides by means of substrate hot electron injection experiments
Author
Driussi, F. ; Iob, R. ; Esseni, D. ; Selmi, L. ; van Schaijk, R. ; Widdershoven, F.
Author_Institution
DIEGM, Udine Univ., Italy
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
159
Lastpage
162
Abstract
In this paper we present experimental evidence of the contribution of stress induced traps to Substrate Hot Electron (SHE) injection. We investigate the energy distribution of traps generated by Fowler Nordheim (FN) and Hot Electron (HE) stress with the aid of simulations and experiments. Results suggest that HE stress generates more oxide traps at high energy with respect to FN stress. The comparison between experiments and simulations also provides a new additional evidence of the inelastic nature of the trap assisted tunneling mechanism.
Keywords
MOS capacitors; hot carriers; insulating thin films; interface states; leakage currents; semiconductor device reliability; tunnelling; CMOS process; Fowler Nordheim stress; Si-SiO/sub 2/; hot electron stress; inelastic trap assisted tunneling mechanism; large area n/sup +/ ringed capacitors; oxide traps; spectroscopic analysis; stress induced traps; substrate hot electron injection; thin oxides; trap assisted tunneling; trap energy distribution; Current measurement; Doping profiles; Electron traps; Helium; Nonvolatile memory; Spectroscopy; Steady-state; Stress; Substrate hot electron injection; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175803
Filename
1175803
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