DocumentCode :
3128110
Title :
Spectroscopic analysis of trap assisted tunneling in thin oxides by means of substrate hot electron injection experiments
Author :
Driussi, F. ; Iob, R. ; Esseni, D. ; Selmi, L. ; van Schaijk, R. ; Widdershoven, F.
Author_Institution :
DIEGM, Udine Univ., Italy
fYear :
2002
fDate :
8-11 Dec. 2002
Firstpage :
159
Lastpage :
162
Abstract :
In this paper we present experimental evidence of the contribution of stress induced traps to Substrate Hot Electron (SHE) injection. We investigate the energy distribution of traps generated by Fowler Nordheim (FN) and Hot Electron (HE) stress with the aid of simulations and experiments. Results suggest that HE stress generates more oxide traps at high energy with respect to FN stress. The comparison between experiments and simulations also provides a new additional evidence of the inelastic nature of the trap assisted tunneling mechanism.
Keywords :
MOS capacitors; hot carriers; insulating thin films; interface states; leakage currents; semiconductor device reliability; tunnelling; CMOS process; Fowler Nordheim stress; Si-SiO/sub 2/; hot electron stress; inelastic trap assisted tunneling mechanism; large area n/sup +/ ringed capacitors; oxide traps; spectroscopic analysis; stress induced traps; substrate hot electron injection; thin oxides; trap assisted tunneling; trap energy distribution; Current measurement; Doping profiles; Electron traps; Helium; Nonvolatile memory; Spectroscopy; Steady-state; Stress; Substrate hot electron injection; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
Type :
conf
DOI :
10.1109/IEDM.2002.1175803
Filename :
1175803
Link To Document :
بازگشت