A study of MOS-controlled thyristor driver

Author

Kazimierczuk, Marian K. ; Nguyen, Sonny T. ; Nguyen, Bick T. ; Weimer, Joseph A.

Author_Institution

Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA

Volume

1

fYear

1995

fDate

22-26 May 1995

Firstpage

56

Abstract

A prototype of Driver II has been developed by Harris Semiconductor Company. This driver is capable of driving very large capacitive loads, up to 60 nF. It can be used to gate MCTs, IGBTs, and power MOSFETs, both N and P type. The objectives of this paper are to design the external circuit for the MCT Driver II and present experimental test results. The dc power supply voltage was 24 V. The input capacitance of the tested MCT TO₂₁₈ is 18 nF. The output voltage of the driver was varying between -12 V and 12 V. The measured value of the rise was 159.5 ns and the measured value of the fall time was 270 ns

Keywords

MOSFET circuits; driver circuits; power MOSFET; power supply circuits; thyristor circuits; -12 to 12 V; 159.5 ns; 18 nF; 24 V; 270 ns; Driver II; Harris Semiconductor Company; IGBT; MCT; MOS-controlled thyristor driver; dc power supply voltage; external circuit; input capacitance; power MOSFET; Capacitance; Circuit testing; Driver circuits; Insulated gate bipolar transistors; MOSFETs; Power supplies; Prototypes; Thyristors; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace and Electronics Conference, 1995. NAECON 1995., Proceedings of the IEEE 1995 National

Conference_Location

Dayton, OH

ISSN

0547-3578

Print_ISBN

0-7803-2666-0

Type

conf

DOI

10.1109/NAECON.1995.521912

Filename

521912