Title :
A study of MOS-controlled thyristor driver
Author :
Kazimierczuk, Marian K. ; Nguyen, Sonny T. ; Nguyen, Bick T. ; Weimer, Joseph A.
Author_Institution :
Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA
Abstract :
A prototype of Driver II has been developed by Harris Semiconductor Company. This driver is capable of driving very large capacitive loads, up to 60 nF. It can be used to gate MCTs, IGBTs, and power MOSFETs, both N and P type. The objectives of this paper are to design the external circuit for the MCT Driver II and present experimental test results. The dc power supply voltage was 24 V. The input capacitance of the tested MCT TO218 is 18 nF. The output voltage of the driver was varying between -12 V and 12 V. The measured value of the rise was 159.5 ns and the measured value of the fall time was 270 ns
Keywords :
MOSFET circuits; driver circuits; power MOSFET; power supply circuits; thyristor circuits; -12 to 12 V; 159.5 ns; 18 nF; 24 V; 270 ns; Driver II; Harris Semiconductor Company; IGBT; MCT; MOS-controlled thyristor driver; dc power supply voltage; external circuit; input capacitance; power MOSFET; Capacitance; Circuit testing; Driver circuits; Insulated gate bipolar transistors; MOSFETs; Power supplies; Prototypes; Thyristors; Time measurement; Voltage;
Conference_Titel :
Aerospace and Electronics Conference, 1995. NAECON 1995., Proceedings of the IEEE 1995 National
Conference_Location :
Dayton, OH
Print_ISBN :
0-7803-2666-0
DOI :
10.1109/NAECON.1995.521912
