Title :
Quantum-well memory device (QWMD) with extremely good charge retention
Author :
Krivokapic, Z. ; Krishnamohan, T. ; Halliyal, A. ; Jafarpour, A. ; Cherian, S. ; Holbrook, A. ; Zheng, W. ; Randolph, M. ; Lin, M.R.
Author_Institution :
AMD, Technol. Res. Group, Sunnyvale, CA, USA
Abstract :
We propose and demonstrate a new device that utilizes a quantum well (its dimensions determined by two self-limiting processes) as a floating gate. We show that fast programming and erasing can be achieved. Excellent charge retention (ten years) is obtained, for 2.7 nm thin tunneling oxide, at room temperature, and for 5 nm thin tunneling oxide even at elevated temperature.
Keywords :
quantum well devices; semiconductor storage; tunnelling; 2.7 to 5 nm; Si; charge retention; endurance; erasing; fabrication; gate oxide undercut; nonvolatile memory devices; polysilicon insert oxidation; programming; quantum well floating gate; quantum-well memory device; self-limiting processes; thin tunneling oxide; Electrodes; Electrons; Fabrication; Nonvolatile memory; Oxidation; Quantum well devices; Shape; Silicon; Temperature; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175809
