DocumentCode
3128245
Title
Quantum-well memory device (QWMD) with extremely good charge retention
Author
Krivokapic, Z. ; Krishnamohan, T. ; Halliyal, A. ; Jafarpour, A. ; Cherian, S. ; Holbrook, A. ; Zheng, W. ; Randolph, M. ; Lin, M.R.
Author_Institution
AMD, Technol. Res. Group, Sunnyvale, CA, USA
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
185
Lastpage
188
Abstract
We propose and demonstrate a new device that utilizes a quantum well (its dimensions determined by two self-limiting processes) as a floating gate. We show that fast programming and erasing can be achieved. Excellent charge retention (ten years) is obtained, for 2.7 nm thin tunneling oxide, at room temperature, and for 5 nm thin tunneling oxide even at elevated temperature.
Keywords
quantum well devices; semiconductor storage; tunnelling; 2.7 to 5 nm; Si; charge retention; endurance; erasing; fabrication; gate oxide undercut; nonvolatile memory devices; polysilicon insert oxidation; programming; quantum well floating gate; quantum-well memory device; self-limiting processes; thin tunneling oxide; Electrodes; Electrons; Fabrication; Nonvolatile memory; Oxidation; Quantum well devices; Shape; Silicon; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175809
Filename
1175809
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