Title :
Silicon-rich-oxides as an alternative charge-trapping medium in Fowler-Nordheim and hot carrier type non-volatile-memory cells
Author :
Rosmeulen, M. ; Sleeckx, E. ; De Meyer, K.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
We present a study on memory cells consisting of a standard MOSFET with a Silicon-Rich-Oxide (SRO) charge-trapping layer incorporated in the gate-dielectric stack. The impact of excess-silicon concentration and tunnel-oxide thickness on basic cell characteristics of both Fowler-Nordheim and hot-carrier type of devices is investigated. We employ a new technique for high-speed determination of the threshold voltage, demonstrate the possibility of 2-bit storage and analyze the Vt-fluctuations in matched transistor pairs.
Keywords :
PLD programming; fluctuations; hot carriers; semiconductor storage; silicon; tunnelling; 2-bit storage; Fowler-Nordheim type; Si; Si-rich-oxides; Vt-fluctuations; cell characteristics; charge trapping layer; excess Si concentration; gate-dielectric stack; hot-carrier type; matched transistor pairs; nonvolatile-memory cells; threshold voltage; tunnel-oxide thickness; Atomic layer deposition; Fabrication; Hot carriers; Low voltage; MOS devices; MOSFET circuits; Pulse measurements; SONOS devices; Scalability; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175810
