Title :
Niobia-stabilized tantalum pentoxide (NST) - novel high-k dielectrics for low-temperature process of MIM capacitors
Author :
Matsui, Y. ; Hiratani, M. ; Asano, I. ; Kimura, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
A novel dielectric - niobia-stabilized tantalum pentoxide (NST) - has been developed and applied in MIM capacitors. A 10% NST film has the effect of decreasing crystallization temperature by more than 150/spl deg/C and enhancing permittivity by 20%, while the leakage current stays low, compared with the properties of conventional tantalum pentoxide. These improved properties result from the fact that the doped niobia stabilizes a low-temperature hexagonal phase with high permittivity.
Keywords :
MIM devices; capacitors; dielectric thin films; leakage currents; niobium compounds; permittivity; tantalum compounds; MIM capacitors; Nb/sub 2/O/sub 5/; Ta/sub 2/O/sub 5/; Ta/sub 2/O/sub 5/-Nb/sub 2/O/sub 5/; crystallization temperature reduction; high permittivity; high-k dielectrics; leakage current; low-temperature hexagonal phase; low-temperature process; niobia-stabilized Ta/sub 2/O/sub 5/ dielectric; Crystallization; Dielectric thin films; Electrodes; Gold; High-K gate dielectrics; MIM capacitors; Permittivity; Radio frequency; Sputtering; Temperature;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175818
