Highly reliable MONOS devices with optimized silicon nitride film having deuterium terminated charge traps

Author

Tanaka, M. ; Saida, S. ; Mitani, Y. ; Mizushima, I. ; Tsunashima, Y.

Author_Institution

Semicond. Co., Toshiba Corp., Yokohama, Japan

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

237

Lastpage

240

Abstract

For highly reliable MONOS devices, an optimized silicon nitride film has been designed from a detailed investigation of relationships between electrically wide ranging films and device performance, and a large improvement has been realized by the powerful technique of deuterium annealing, yielding highly durable devices against endurance stress of write/erase operations.

Keywords

MIS structures; annealing; defect states; dielectric thin films; integrated memory circuits; leakage currents; semiconductor device reliability; silicon compounds; D/sub 2/ terminated charge traps; SiN; charge storage layer; charge trap profiles; deuterium annealing; device performance; electrically wide ranging films; endurance stress; highly durable devices; highly reliable MONOS devices; leakage current; optimized SiN films; scaled nonvolatile semiconductor memory; write/erase operation; Annealing; Degradation; Deuterium; Leakage current; MONOS devices; Nonvolatile memory; Semiconductor films; Silicon compounds; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175821

Filename

1175821