Title :
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
Author :
Kedzierski, J. ; Nowak, E. ; Kanarsky, T. ; Zhang, Y. ; Boyd, D. ; Carruthers, R. ; Cabral, C. ; Amos, R. ; Lavoie, C. ; Roy, R. ; Newbury, J. ; Sullivan, E. ; Benedict, J. ; Saunders, P. ; Wong, K. ; Canaperi, D. ; Krishnan, M. ; Lee, K.-L. ; Rainey, B.A
Author_Institution :
IBM Semicond. Res. & Dev. Center, IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Metal-gate FinFET and FDSOI devices were fabricated using total gate silicidation. Devices satisfy the following metal-gate technology requirements: ideal mobility, low gate leakage, high transconductance, competitive I/sub on//I/sub off/, and adjustable V/sub t/. Six silicide gate materials are presented, as well as two silicide workfunction engineering methods.
Keywords :
MOSFET; capacitance; carrier mobility; leakage currents; semiconductor device metallisation; silicon-on-insulator; CoSi/sub 2/; FDSOI devices; NiSi; PdSi; fully-depleted SOI devices; high transconductance; ideal mobility; low gate leakage; metal-gate FinFET; metal-gate technology requirements; scaled CMOS devices; silicide gate materials; silicide workfunction engineering methods; thin-body devices; total gate silicidation; Doping; Epitaxial growth; FinFETs; Gate leakage; Implants; Microelectronics; Silicidation; Silicides; Silicon on insulator technology; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175824
