Title :
FinFET process refinements for improved mobility and gate work function engineering
Author :
Yang-Kyu Choi ; Leland Chang ; Ranade, P. ; Jeong-Soo Lee ; Daewon Ha ; Balasubramanian, S. ; Agarwal, A. ; Ameen, M. ; Tsu-Jae King ; Bokor, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Process refinements to improve the performance of FinFETs are described. Hydrogen annealing is shown to provide high surface quality on etched fin sidewalls for improved drive current and noise performance. Appropriate V/sub t/ is achieved in lightly doped p-channel FinFETs using Molybdenum (Mo) as the gate-electrode material for the first time. Multiple values of V/sub t/ are achieved via gate work function engineering by selective implantation of Mo.
Keywords :
CMOS integrated circuits; MOSFET; annealing; carrier mobility; hydrogen; molybdenum; semiconductor device metallisation; semiconductor device noise; work function; CMOS FinFETs; FinFET process refinements; H annealing; Mo; Mo gate-electrode material; Mo selective implantation; double-gate MOSFET structure; drive current; etched fin sidewalls; gate work function engineering; high surface quality; lightly doped p-channel FinFETs; mobility improvement; noise performance; Annealing; CMOS technology; Degradation; Etching; FinFETs; Hydrogen; Lithography; MOSFET circuits; Rough surfaces; Surface roughness;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175827
