Title :
1.5 μm InAlGaAs/InP VCSELs with Al2O3 Embedded Apertures
Author :
Song, Hyun-Woo ; Han, Won Seok ; Kim, Jongdeog ; Kim, JongHee ; KoPark, SangHee
Author_Institution :
IT Convergence & Components Lab., Electron. & Telecommun. Res. Inst., Daejeon
fDate :
Oct. 29 2006-Nov. 2 2006
Abstract :
We report InAlGaAs VCSELs with Al2O3 embedded apertures. Using atomic layer deposition, the current confinement apertures are fabricated by depositing of Al2O 3 on air-gap surfaces of undercut apertures, 1.57mum VCSELs showing the output power of over 1 mW and direct modulation at 4 Gbit/s are reported using these apertures
Keywords :
III-V semiconductors; aluminium compounds; atomic layer deposition; gallium arsenide; indium compounds; laser beams; laser cavity resonators; semiconductor lasers; surface emitting lasers; 1 mW; 1.5 micron; 4 Gbit/s; Al2O3; Al2O3 embedded aperture; InAlGaAs-InP; InAlGaAs-lnP VCSEL; air-gap surface; atomic layer deposition; current confinement aperture; Aluminum oxide; Apertures; Atomic layer deposition; Distributed Bragg reflectors; Indium gallium arsenide; Indium phosphide; MOCVD; Power generation; Transistors; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9556-5
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279206
