• DocumentCode
    3128640
  • Title

    1.5 μm InAlGaAs/InP VCSELs with Al2O3 Embedded Apertures

  • Author

    Song, Hyun-Woo ; Han, Won Seok ; Kim, Jongdeog ; Kim, JongHee ; KoPark, SangHee

  • Author_Institution
    IT Convergence & Components Lab., Electron. & Telecommun. Res. Inst., Daejeon
  • fYear
    2006
  • fDate
    Oct. 29 2006-Nov. 2 2006
  • Firstpage
    444
  • Lastpage
    445
  • Abstract
    We report InAlGaAs VCSELs with Al2O3 embedded apertures. Using atomic layer deposition, the current confinement apertures are fabricated by depositing of Al2O 3 on air-gap surfaces of undercut apertures, 1.57mum VCSELs showing the output power of over 1 mW and direct modulation at 4 Gbit/s are reported using these apertures
  • Keywords
    III-V semiconductors; aluminium compounds; atomic layer deposition; gallium arsenide; indium compounds; laser beams; laser cavity resonators; semiconductor lasers; surface emitting lasers; 1 mW; 1.5 micron; 4 Gbit/s; Al2O3; Al2O3 embedded aperture; InAlGaAs-InP; InAlGaAs-lnP VCSEL; air-gap surface; atomic layer deposition; current confinement aperture; Aluminum oxide; Apertures; Atomic layer deposition; Distributed Bragg reflectors; Indium gallium arsenide; Indium phosphide; MOCVD; Power generation; Transistors; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
  • Conference_Location
    Montreal, Que.
  • Print_ISBN
    0-7803-9556-5
  • Electronic_ISBN
    0-7803-9555-7
  • Type

    conf

  • DOI
    10.1109/LEOS.2006.279206
  • Filename
    4054248
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3128640