DocumentCode :
3128655
Title :
In-phase Evanescent Coupled Implant Defined Vertical Cavity Laser Arrays
Author :
Lehman, Ann C. ; Choquette, Kent D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL
fYear :
2006
fDate :
Oct. 2006
Firstpage :
446
Lastpage :
447
Abstract :
Arrays of vertical cavity surface emitting lasers (VCSELs) have been studied extensively for coherent coupling between lasers. In this work, we show that proton implantation may be used to define individual elements in the coupled array. This approach adds no fabrication complexity to that of a conventional implant VCSEL. Because the implant provides electrical confinement without adding optical loss, the lasers tend to lock in-phase. A near-field image and a far-field pattern for a 2times1 array are shown at an injection current of 4.3 mA. As injection current is increased to these implant-defined arrays, higher-order transverse modes turn on, which limits the single-mode output power. Ongoing efforts are to suppress these higher order modes and thus allow these evanescently coupled arrays to operate in-phase with higher injection current
Keywords :
laser cavity resonators; optical fabrication; optical losses; semiconductor laser arrays; surface emitting lasers; 4.3 mA; VCSEL; electrical confinement; fabrication complexity; in-phase evanescent coupled implant; injection current; optical loss; proton implantation; vertical cavity surface emitting laser array; Implants; Laser mode locking; Optical arrays; Optical coupling; Optical device fabrication; Optical losses; Optical surface waves; Protons; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
Type :
conf
DOI :
10.1109/LEOS.2006.279207
Filename :
4054249
Link To Document :
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