Title :
Extreme scaling with ultra-thin Si channel MOSFETs
Author :
Doris, Bruce ; Ieong, Meikei ; Kanarsky, Thomas ; Zhang, Ying ; Roy, Ronnen A. ; Dokumaci, Omer ; Ren, Zhibin ; Jamin, Fen-Fen ; Shi, Leathen ; Natzle, Wesley ; Huang, Hsiang-Jen ; Mezzapelle, Joseph ; Mocuta, Anda ; Womack, Sherry ; Gribelyuk, Michael ;
Author_Institution :
Microelectron. Div., IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA
Abstract :
We examine the scaling limits for planar single gate technology using the ultra-thin Si channel MOSFET. Characteristics for extreme scaled devices with physical gate lengths down to 6 nm and SOI channels as thin as 4 nm are presented. For the first time, we report ring oscillators with 26 nm gate lengths and ultra-thin Si channels.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; nanoelectronics; silicon; silicon-on-insulator; 14 nm; 4 to 26 nm; CMOS device scaling; SCE control; SOI channels; SOI wafers; Si; extreme scaling; planar single gate technology; scaling limits; short channel effect; thick gate oxide; ultra-thin Si channel MOSFETs; Dielectrics; Doping; Fabrication; Implants; MOSFETs; Microelectronics; Oxidation; Research and development; Ring oscillators; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175829
