Title :
Threshold Current Reduction in a Vertical-cavity Surface-emitting Laser via Electron Spin Injection
Author :
Holub, M. ; Shin, J. ; Saha, D. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
Abstract :
Semiconductor spintronics has been the subject of intensive experimental and theoretical investigations aimed at realizing devices which can outperform their charge-based counterparts. The spin-polarized vertical-cavity surface-emitting laser (spin-VCSEL) promises a number of advantages over a conventional VCSEL and has potential applications in cryptographic communications and reconfigurable optical interconnects. Here we report the first demonstration of a threshold current reduction in a spin-polarized vertical-cavity surface- emitting laser (spin-VCSEL) through electrical injection of spin-polarized electrons
Keywords :
cryptography; magnetoelectronics; optical interconnections; semiconductor lasers; spin polarised transport; surface emitting lasers; cryptographic communication; electrical injection; reconfigurable optical interconnects; semiconductor spintronics; spin-VCSEL; spin-polarized electron; spin-polarized vertical-cavity surface-emitting laser; threshold current reduction; Cryptography; Electrons; Laser theory; Magnetoelectronics; Optical interconnections; Semiconductor lasers; Spin polarized transport; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279209
