Threshold Current Reduction in a Vertical-cavity Surface-emitting Laser via Electron Spin Injection

Author

Holub, M. ; Shin, J. ; Saha, D. ; Bhattacharya, P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI

fYear

2006

fDate

Oct. 2006

Firstpage

450

Lastpage

451

Abstract

Semiconductor spintronics has been the subject of intensive experimental and theoretical investigations aimed at realizing devices which can outperform their charge-based counterparts. The spin-polarized vertical-cavity surface-emitting laser (spin-VCSEL) promises a number of advantages over a conventional VCSEL and has potential applications in cryptographic communications and reconfigurable optical interconnects. Here we report the first demonstration of a threshold current reduction in a spin-polarized vertical-cavity surface- emitting laser (spin-VCSEL) through electrical injection of spin-polarized electrons

Keywords

cryptography; magnetoelectronics; optical interconnections; semiconductor lasers; spin polarised transport; surface emitting lasers; cryptographic communication; electrical injection; reconfigurable optical interconnects; semiconductor spintronics; spin-VCSEL; spin-polarized electron; spin-polarized vertical-cavity surface-emitting laser; threshold current reduction; Cryptography; Electrons; Laser theory; Magnetoelectronics; Optical interconnections; Semiconductor lasers; Spin polarized transport; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-9555-7

Electronic_ISBN

0-7803-9555-7

Type

conf

DOI

10.1109/LEOS.2006.279209

Filename

4054251