Title :
Strain Enhanced High Efficiency Germanium Photodetectors in the Near Infrared for Integration with Si
Author :
Okyay, Ali K. ; Nayfeh, Ammar M. ; Saraswat, Krishna C. ; Ozguven, Nevran ; Marshall, Ann ; McIntyre, Paul C. ; Yonehara, Takao
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA
Abstract :
Germanium-on-silicon photodetectors with responsivities as high as 0.85 A/W at 1550 nm that exhibit dark currents of 100 mA/cm2 and external efficiency up to 68% are demonstrated. Strain in the Ge film was determined to be 0.16%, reducing the optical bandgap by ~12 meV, resulting in a ~20 nm red shift at the absorption edge
Keywords :
elemental semiconductors; germanium; integrated optoelectronics; photodetectors; silicon; 1550 nm; Ge film; Ge-Si; dark current; germanium-on-silicon photodetector; optical bandgap; strain enhanced high efficiency photodetector; Annealing; CMOS technology; Capacitive sensors; Dark current; Germanium; Hydrogen; Materials science and technology; Optical films; Photodetectors; Silicon;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279214
