Title :
Line edge roughness: characterization, modeling and impact on device behavior
Author :
Croon, J.A. ; Storms, G. ; Winkelmeier, S. ; Pollentier, I. ; Ercken, M. ; Decoutere, S. ; Sansen, Willy ; Maes, H.E.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Simple analytical expressions are presented, which calculate the impact of line edge roughness on MOSFET parameter fluctuations. It is experimentally demonstrated that LER has no impact on 80 nm gate length transistors. Simulations show LER to become significant for 32 nm channel length devices.
Keywords :
MOSFET; fluctuations; semiconductor device measurement; semiconductor device models; surface topography; ultraviolet lithography; 193 nm; 193 nm lithography process; 32 nm; 32 nm channel length devices; 80 nm; 80 nm gate length transistors; MOSFET; MOSFET parameter fluctuations; analytical expressions; characterization; device behavior; line edge roughness; modeling; simulations; top-view SEM image; Analytical models; Degradation; Fluctuations; Frequency conversion; Lithography; MOSFET circuits; Predictive models; Sampling methods; Scanning electron microscopy; Storms;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175840
