Title :
Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies
Author :
Dodd, P.E. ; Shaneyfelt, M.R. ; Schwank, J.R. ; Hash, G.L.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
In this work we compare neutron-induced soft error rates (SER) and latchup in SRAMs from a variety of manufacturers. SER is found to vary widely between different vendors and technology generations, and some SRAMs show extreme sensitivity to neutron-induced latchup. Continuous spectrum neutron and monoenergetic proton accelerated soft error rate test methods are compared.
Keywords :
SRAM chips; integrated circuit testing; neutron effects; SRAM technology; latchup; neutron irradiation; soft error rate; test method; CMOS technology; Capacitance; Error analysis; Integrated circuit technology; Life estimation; Neutrons; Protons; Random access memory; Testing; Voltage;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175846
