DocumentCode
3128979
Title
Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies
Author
Dodd, P.E. ; Shaneyfelt, M.R. ; Schwank, J.R. ; Hash, G.L.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
333
Lastpage
336
Abstract
In this work we compare neutron-induced soft error rates (SER) and latchup in SRAMs from a variety of manufacturers. SER is found to vary widely between different vendors and technology generations, and some SRAMs show extreme sensitivity to neutron-induced latchup. Continuous spectrum neutron and monoenergetic proton accelerated soft error rate test methods are compared.
Keywords
SRAM chips; integrated circuit testing; neutron effects; SRAM technology; latchup; neutron irradiation; soft error rate; test method; CMOS technology; Capacitance; Error analysis; Integrated circuit technology; Life estimation; Neutrons; Protons; Random access memory; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175846
Filename
1175846
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