Tunable work function molybdenum gate technology for FDSOI-CMOS

Author

Ranade, Pushkar ; Choi, Yang-Kyu ; Ha, Daewon ; Agarwal, Abhishek ; Ameen, Michael ; King, Tsu-Jae

Author_Institution

Dept. of Mater. Sci. & Eng., California Univ., Berkeley, CA, USA

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

363

Lastpage

366

Abstract

A simple technique for tuning the work function of molybdenum (Mo) gate material over a wide range (4.5 V-4.9 V) is investigated. Ultra-low energy (/spl les/3 keV) Ar/sup +/ and N/sup +/ ion implantation is used to selectively induce structural and/or chemical changes in Mo gate films. These changes are shown to directly affect the Mo gate work function, so that it can be adjusted by adjusting the implant parameters and annealing conditions. The mechanism behind this phenomenon is investigated using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The applicability of this technique for threshold voltage (V/sub TH/) control, particularly in fully-depleted SOI CMOS devices, is demonstrated with Mo gated ultra-thin body (UTB) SOI MOSFETs and double-gate FinFETs.

Keywords

CMOS integrated circuits; MOSFET; X-ray diffraction; X-ray photoelectron spectra; annealing; ion implantation; silicon-on-insulator; work function; 3 keV; 4.5 to 4.9 V; FDSOI-CMOS; Mo-SiO/sub 2/-Si; X-ray diffraction; X-ray photoelectron spectroscopy; annealing conditions; double-gate FinFETs; gate work function; implant parameters; threshold voltage control; tunable work function; ultra-thin body MOSFETs; Annealing; Argon; Chemicals; Implants; Ion implantation; Spectroscopy; Threshold voltage; Voltage control; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175853

Filename

1175853