Flash-the memory technology of the future that´s here today

Author

Wett, Tom ; Levy, Stuart

Author_Institution

Div. of Mil. & Special Products, Intel Corp., Chandler, AZ, USA

Volume

1

fYear

1995

fDate

22-26 May 1995

Firstpage

359

Abstract

The traditional method of designing memory systems was to use DRAM and SRAM for volatile storage and either EPROM or first generation FLASH for non-volatile storage. Today´s embedded avionics and military designers can take advantage of the new generation of Flash memories. Flash memory has come of age very quickly. Flash memory chips are available in special environment temperature ranges in speeds as fast as 85 ns and as dense as 8 Mbits. We expect to see special environment parts that have 161Mbits and 75 ns access time in the near future. These fast access times along with very high densities, make Flash a great fit into applications that used to use several ROM, EEPROMs or DRAMs. To help show that Flash is a natural fit into designs that up until now have been using ROM, EEPROM and DRAM, a detailed analysis of Flash technology and how it compares to other memory is provided

Keywords

avionics; integrated memory circuits; military avionics; military equipment; 16 Mbit; 75 ns; 8 Mbit; 85 ns; DRAM; EEPROM; EPROM; ETOX; Flash memory chips; NAND; NOR; PEROM; comparisons; embedded avionics; fast access times; military designers; nonvolatile storage; Aerospace electronics; Design engineering; Design methodology; EPROM; Flash memory; Hardware; Nonvolatile memory; Random access memory; Read only memory; Systems engineering and theory; Temperature distribution; User interfaces; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace and Electronics Conference, 1995. NAECON 1995., Proceedings of the IEEE 1995 National

Conference_Location

Dayton, OH

ISSN

0547-3578

Print_ISBN

0-7803-2666-0

Type

conf

DOI

10.1109/NAECON.1995.521965

Filename

521965