Advanced Si/sub 1-x/Gex source/drain and contact technologies for sub-70 nm CMOS

Future CMOS technology nodes require super-abrupt source/drain junctions with very low contact resistivities. In this paper, we examine properties of ultra-shallow junctions formed by selective deposition of in-situ doped Si/sub 1-x/Ge/sub x/ alloys. Contacts to these junctions consist of self-aligned Ni and Pt germanosilicide contacts formed via solid phase reactions. We present super-abrupt junctions with SIMS abruptness figures under 2.2 nm/decade and contact resistivities near 10/sup -8/ ohm-cm/sup 2/. The results indicate that the technology can meet source/drain requirements of all technology nodes included in the 2001 edition of International Technology Roadmap for Semiconductors.