Title :
Temporal and spatial current stability of the integrated LD-MOSFET/field emission arrays
Author :
Ching-yin Hong ; Akinwande, A.I.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
Emission current stability and spatial uniformity of field emission devices are improved when a lightly doped drain-MOSFET (LD-MOSFET) is integrated with a field emission array (FEA) and the integrated device is operated in the regime where the emission current is controlled by the supply of electrons to the surface. The same structure results in low threshold voltage of less than 0.5 V. An on/off current ratio of 1000:1 was obtained using a modest MOSFET gate voltage swing of 0.5 V.
Keywords :
MOSFET; carrier density; inversion layers; stability; vacuum microelectronics; 0.5 V; MOSFET gate voltage swing; emission current stability; integrated LD-MOSFET/field emission arrays; lightly doped drain-MOSFET; on/off current; spatial current stability; temporal stability; threshold voltage; Electron emission; Field emitter arrays; Lithography; Low voltage; MOSFET circuits; Optical arrays; Silicon; Stability; Threshold voltage; Voltage control;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175861
