Title :
Field electron emission device using silicon nano-wires
Author :
Sawada, Kazuaki ; Futagawa, Masato ; Arai, Yuji ; Kawano, Takeshi ; Takao, Hidekuni ; Ishida, Makoto
Author_Institution :
Dept. of Electr. & Electron. Eng., Toyoliashi Univ. of Technol., Aichi, Japan
Abstract :
We propose a novel smart field electron emission device using silicon nano-wires, and demonstrate field electron emission with a quite low operation voltage from a gated silicon nano-wire. The threshold voltage is about 13V and the value is similar to gated carbon-nanotube field emitter. The emission current reaches 10nA at 15V of gate voltage.
Keywords :
elemental semiconductors; intelligent structures; nanowires; silicon; vacuum microelectronics; 10 nA; 13 V; 15 V; Si; emission current; field electron emission device; gated nano-wires; operation voltage; smart device; threshold voltage; Carbon nanotubes; Circuits; Electron emission; MOSFETs; Nanoscale devices; Probes; Silicon; Size control; Threshold voltage; Wire;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175863
