Title :
High-speed InGaAs VCSELs
Author :
Suzuki, N. ; Hatakeyama, H. ; Yashiki, K. ; Fukatsu, K. ; Tokutome, K. ; Akagawa, T. ; Anan, T. ; Tsuji, M.
Author_Institution :
NEC Syst. Device Res. Labs, NEC Corp., Seiran
Abstract :
We developed VCSELs based on InGaAs-QWs for high-speed optical interconnections. Error-free operations were achieved up to 25 Gbps. We also proposed VCSELs with type-II tunnel junctions to reduce electrical resistance for higher speed operation
Keywords :
III-V semiconductors; electric resistance; gallium arsenide; high-speed optical techniques; indium compounds; laser cavity resonators; optical interconnections; quantum well lasers; surface emitting lasers; InGaAs; electrical resistance; error-free operations; high-speed QW VCSEL; high-speed optical interconnections; type-II tunnel junctions; Bandwidth; Bit error rate; Electric resistance; Error-free operation; Gallium arsenide; Indium gallium arsenide; National electric code; Optical interconnections; Signal analysis; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278742
