DocumentCode
3129322
Title
High-speed InGaAs VCSELs
Author
Suzuki, N. ; Hatakeyama, H. ; Yashiki, K. ; Fukatsu, K. ; Tokutome, K. ; Akagawa, T. ; Anan, T. ; Tsuji, M.
Author_Institution
NEC Syst. Device Res. Labs, NEC Corp., Seiran
fYear
2006
fDate
Oct. 2006
Firstpage
508
Lastpage
509
Abstract
We developed VCSELs based on InGaAs-QWs for high-speed optical interconnections. Error-free operations were achieved up to 25 Gbps. We also proposed VCSELs with type-II tunnel junctions to reduce electrical resistance for higher speed operation
Keywords
III-V semiconductors; electric resistance; gallium arsenide; high-speed optical techniques; indium compounds; laser cavity resonators; optical interconnections; quantum well lasers; surface emitting lasers; InGaAs; electrical resistance; error-free operations; high-speed QW VCSEL; high-speed optical interconnections; type-II tunnel junctions; Bandwidth; Bit error rate; Electric resistance; Error-free operation; Gallium arsenide; Indium gallium arsenide; National electric code; Optical interconnections; Signal analysis; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9555-7
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.278742
Filename
4054280
Link To Document