Title :
Comparison of buried and implanted tunnel junction as current confinement schemes for the realisation of single-transverse-mode large diameter (50μm) 1.55μm InP-based electrically-pumped VECSELs
Author :
Bousseksou, A. ; Bouchoule, S. ; Strassner, M. ; Sagnes, I. ; Jacquet, J. ; Crozat, P.
Author_Institution :
Lab. de Photonique et de Nanostruct., CNRS, Marcoussis
fDate :
Oct. 29 2006-Nov. 2 2006
Abstract :
We compared buried (BTJ) and ion implanted tunnel junction (ITJ) as current confinement schemes for 1550 nm 1/2-VCSELS. Reduced thermal resistance is obtained for BJT, but reduced current crowding is evidenced for ITJ. Single-transverse mode laser emission is obtained from large diameters devices
Keywords :
III-V semiconductors; indium compounds; laser beams; laser cavity resonators; laser modes; surface emitting lasers; thermal resistance; 1550 nm; 50 micron; InP; buried tunnel junction; current confinement schemes; current crowding; ion implanted tunnel junction; large-diameter electrically-pumped VCSEL; single-transverse-mode laser emission; thermal resistance; Doping; Indium phosphide; Nonlinear optics; Optical devices; Optical harmonic generation; Optical pumping; Proximity effect; Surface emitting lasers; Thermal resistance; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9556-5
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278746
