• DocumentCode
    3129530
  • Title

    Novel low offset voltage diode using asymmetric threshold voltage MONOS-FET for next generation devices demanding low voltage operation

  • Author

    Ueno, S. ; Furuta, H. ; Okumura, Y. ; Eimori, T. ; Inoue, Yasuyuki

  • Author_Institution
    ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan
  • fYear
    2002
  • fDate
    8-11 Dec. 2002
  • Firstpage
    449
  • Lastpage
    452
  • Abstract
    Novel diode with low offset voltage below 0.6V is proposed by using MONOS FET with asymmetric threshold voltage. Offset voltage of 0.3V can be achieved by suppressing off state current and reverse leakage current. This technique gives promising characteristics for next generation circuits with low voltage operation.
  • Keywords
    MOSFET; characteristics measurement; leakage currents; low-power electronics; semiconductor device measurement; 0.3 to 0.6 V; MOS diodes; asymmetric threshold voltage MONOS-FET; charge pump circuit; low offset voltage diode; low voltage operation; next generation devices; off state current suppression; reverse leakage current suppression; Circuits; Diodes; Electrons; FETs; Leakage current; Low voltage; MONOS devices; Photonic band gap; Threshold voltage; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2002. IEDM '02. International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7462-2
  • Type

    conf

  • DOI
    10.1109/IEDM.2002.1175875
  • Filename
    1175875
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3129530