Title :
Novel low offset voltage diode using asymmetric threshold voltage MONOS-FET for next generation devices demanding low voltage operation
Author :
Ueno, S. ; Furuta, H. ; Okumura, Y. ; Eimori, T. ; Inoue, Yasuyuki
Author_Institution :
ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Novel diode with low offset voltage below 0.6V is proposed by using MONOS FET with asymmetric threshold voltage. Offset voltage of 0.3V can be achieved by suppressing off state current and reverse leakage current. This technique gives promising characteristics for next generation circuits with low voltage operation.
Keywords :
MOSFET; characteristics measurement; leakage currents; low-power electronics; semiconductor device measurement; 0.3 to 0.6 V; MOS diodes; asymmetric threshold voltage MONOS-FET; charge pump circuit; low offset voltage diode; low voltage operation; next generation devices; off state current suppression; reverse leakage current suppression; Circuits; Diodes; Electrons; FETs; Leakage current; Low voltage; MONOS devices; Photonic band gap; Threshold voltage; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175875
