Light Emission from Silicon-based Nano-materials

Author

Negro, L. Dal ; Yi, J.H. ; Koklu, H. ; Michel, J. ; Kimerling, L.C.

Author_Institution

Massachusetts Inst. of Technol., Cambridge, MA

fYear

2006

fDate

Oct. 2006

Firstpage

544

Lastpage

544

Abstract

This paper presents an overview of the research activities aimed at engineering novel, nanostructured-based materials solutions for CMOS-compatible electrically driven light sources. In particular, the state of the art of the optical and electrical properties of Si-nc nucleated within Si-rich nitride (SRN) matrices, and their large potential for energy sensitized, efficient 1.55mum electroluminescence under low injection fields are discussed

Keywords

electroluminescence; nanostructured materials; optical materials; photoluminescence; silicon compounds; 1.55 micron; CMOS-compatible electrically driven light source; Si-nc nucleated Si-rich nitride matrices; SiN; electrical properties; electroluminescence; light emission; nanostructured-based material; optical properties; silicon-based nano-materials; CMOS technology; Light emitting diodes; Optical materials; Optical pumping; Photonics; Radiative recombination; Silicon; Spontaneous emission; Stimulated emission; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-9555-7

Electronic_ISBN

0-7803-9555-7

Type

conf

DOI

10.1109/LEOS.2006.278760

Filename

4054298