Title :
Saddle add-on metallisation (SAM) for RF inductor implementation in standard IC interconnects
Author :
Rejaei, B. ; Burghartz, J.N. ; Schellevis, H.
Author_Institution :
Fac. of Inf. Technol. & Syst., Delft Univ. of Technol., Netherlands
Abstract :
A cost-effective add-on process module is proposed for reduction of ohmic losses of RF inductors and interconnects in RF/BiCMOS and RF/CMOS technologies built on logic CMOS processes. The module is based on the local thickening of the top metal layer of the thin CMOS interconnects by Cu plating. A record quality factor of 13 is achieved for a 10-nH inductor on a conventional 5-/spl Omega/-cm silicon substrate.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; MMIC; Q-factor; UHF integrated circuits; inductors; integrated circuit metallisation; losses; 5 ohmcm; BiCMOS; CMOS; Cu; RF inductor implementation; SAM; local thickening; logic CMOS processes; ohmic losses; quality factor; saddle add-on metallisation; standard IC interconnects; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Inductors; Metallization; Q factor; Radio frequency; Radiofrequency integrated circuits; Silicon;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175880
