DocumentCode
3130033
Title
Future 1T1C FRAM technologies for highly reliable, high density FRAM
Author
Lee, S.Y. ; Kim, K.
Author_Institution
Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
547
Lastpage
550
Abstract
Recent 32 Mb FRAM technologies realizing 0.25 /spl mu/m/15F2 cell are introduced and key integration technologies for future highly reliable, high density FRAM are suggested. Etchless capacitor technology and MOCVD PZT technology are the promising solutions for realizing future highly reliable, high density FRAM beyond 32 Mb density.
Keywords
ferroelectric storage; integrated circuit reliability; random-access storage; 0.25 micron; 1T1C FRAM technology; 32 Mbit; MOCVD PZT technology; PZT; PbZrO3TiO3; etchless capacitor technology; high-density memory; reliability; Capacitors; Chemistry; Electrodes; Etching; Ferroelectric films; Nonvolatile memory; Oxidation; Plugs; Polarization; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175900
Filename
1175900
Link To Document