DocumentCode
3130049
Title
Novel High-Brightness Laser Dtodes at 830 nm
Author
Yanson, Dan A. ; Qiu, Bocang ; Kowalski, Olek P. ; McDougall, Stewart D. ; Marsh, John H.
Author_Institution
Intense Ltd., Glasgow
fYear
2006
fDate
Oct. 2006
Firstpage
585
Lastpage
586
Abstract
We present novel high-power laser diodes at 830 nm with a device structure and epitaxy design optimized for high-brightness operation. A reduction in both horizontal and vertical far-field angles is demonstrated together with improvement in beam quality.
Keywords
brightness; laser beams; semiconductor epitaxial layers; semiconductor lasers; 830 nm; beam quality; far-field angles; high-brightness operation; high-power laser diodes; laser epitaxy design; Biomedical optical imaging; Laser beams; Laser excitation; Optical beams; Optical pumping; Optical refraction; Optical sensors; Optical variables control; Optical waveguides; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, QC, Canada
Print_ISBN
0-7803-9555-7
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.278794
Filename
4054319
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