DocumentCode
3130111
Title
High-performance single-crystalline-silicon TFTs on a non-alkali glass substrate
Author
Sano, Y. ; Takei, M. ; Hara, A. ; Sasaki, N.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
565
Lastpage
568
Abstract
A new single-crystal silicon growth method for fabricating high-performance thin-film transistors (TFTs) was developed. High-performance TFTs - with an 8-/spl mu/m-wide and 20-/spl mu/m-long single-crystal silicon region and a field-effect mobility of 580 cm/sup 2//Vs for the n-channel and 330 cm/sup 2//Vs for the p-channel - were fabricated below 450/spl deg/C on a 300/spl times/300 mm/sup 2/ non-alkali glass substrate.
Keywords
carrier mobility; elemental semiconductors; laser beam annealing; recrystallisation annealing; silicon; thin film transistors; 20 micron; 450 degC; 8 micron; SOG; Si-SiO/sub 2/; field-effect mobility; high-performance single-crystalline Si TFTs; high-performance thin-film transistors; n-channel; nonalkali glass substrate; p-channel; single-crystal silicon growth method; single-crystal silicon region; Crystallization; Etching; Glass; Grain boundaries; Grain size; Silicon; Solid lasers; Substrates; Temperature; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175904
Filename
1175904
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